发明名称 Manufacturing method for an electron-emitting source of triode structure
摘要 A manufacturing method for an electron-emitting source of triode structure, including forming a cathode layer on a substrate, forming a dielectric layer on the cathode layer, and positioning an opening in the dielectric layer to expose the cathode layer, wherein the opening has a surrounding region, forming a gate layer on the dielectric layer, except on the surrounding region, forming a hydrophilic layer in the opening, forming a hydrophobic layer on the gate layer and the surrounding region, wherein the hydrophobic layer contacts the ends of the hydrophilic layer, dispersing a carbon nanotube solution on the hydrophilic layer using ink jet printing, executing a thermal process step, and removing the hydrophobic layer. According to this method, carbon nanotubes are deposited over a large area in the gate hole.
申请公布号 US2003049875(A1) 申请公布日期 2003.03.13
申请号 US20020067315 申请日期 2002.02.07
申请人 SHEU JYH-RONG;HO JIA-CHONG;CHANG YU-YANG;CHENG HUA-CHI;LEE CHENG-CHUNG 发明人 SHEU JYH-RONG;HO JIA-CHONG;CHANG YU-YANG;CHENG HUA-CHI;LEE CHENG-CHUNG
分类号 C25D13/00;H01J3/02;H01J9/02;(IPC1-7):B44C1/22;C25F3/00;H01J9/24;H01L21/00 主分类号 C25D13/00
代理机构 代理人
主权项
地址