发明名称 Low dielectric constant material and method of processing by CVD
摘要 Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula SivOwCxHyFz, where v+w+x+y+z=100%, v is from 10 to 35 atomic %, w is from 10 to 65 atomic % y is from 10 to 50 atomic %, x is from 1 to 30 atomic %, z is from 0.1 to 15 atomic %, and x/z is optionally greater than 0.25, wherein substantially none of the fluorine is bonded to the carbon. A CVD method includes: (a) providing a substrate within a vacuum chamber; (b) introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and (c) applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.
申请公布号 US2003049460(A1) 申请公布日期 2003.03.13
申请号 US20010863150 申请日期 2001.05.23
申请人 发明人 O'NEILL MARK LEONARD;PETERSON BRIAN KEITH;VINCENT JEAN LOUISE;VRTIS RAYMOND NICHOLAS
分类号 C23C16/42;C03C3/04;C03C14/00;C23C16/30;C23C16/40;H01L21/312;H01L21/316;H01L21/768;H01L23/522;(IPC1-7):B32B9/00 主分类号 C23C16/42
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