| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
As impurity ions for forming a channel, heavy ions are implanted multiple times at a dose such that no dislocation-loop defect layer is caused to be formed, and an annealing process is performed after each ion implantation process has been carried out, thereby forming a heavily doped channel layer having a steep retro-grade impurity profile.
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| 申请公布号 |
US2003049917(A1) |
申请公布日期 |
2003.03.13 |
| 申请号 |
US20020235830 |
申请日期 |
2002.09.06 |
| 申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NODA TAIJI |
| 分类号 |
H01L29/78;H01L21/265;H01L21/324;H01L21/336;H01L29/10;(IPC1-7):H01L21/338;H01L21/425;H01L21/823 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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