发明名称 |
Graded composition metal oxide tunnel barrier interpoly insulators |
摘要 |
Structures and methods for programmable array type logic and/or memory devices with graded composition metal oxide tunnel barrier intergate insulators are provided. The programmable array type logic and/or memory devices include a floating gate transistor. The floating gate has a first source/drain region and a second source/drain region separated by a channel region in a substrate. A floating gate opposes the channel region and is separated therefrom by a gate oxide. A control gate opposes the floating gate and is separated from the floating gate by a compositionally graded mixed metal oxide tunnel barrier intergate insulator.
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申请公布号 |
US2003048666(A1) |
申请公布日期 |
2003.03.13 |
申请号 |
US20020177096 |
申请日期 |
2002.06.21 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
ELDRIDGE JEROME M.;AHN KIE Y.;FORBES LEONARD |
分类号 |
G11C16/04;H01L21/8247;H01L27/115;H01L29/51;H01L29/788;(IPC1-7):G11C11/34 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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