| 摘要 |
<p>A semiconductor radiating substrate consisting of Cu-W alloys and improved in heat conductivity by reducing iron-group metal causing heat scattering, and a low-cost, high-quality semiconductor radiating substrate which uses a plurality of Cu-W alloys or a combination of the alloys and copper to further increase heat conductivity. A semiconductor radiating substrate consisting of Cu-W alloys having copper infiltrated into pores, wherein a pore diameter is at least 0.3 μm at 95% of the cumulative specific surface area of a tungsten porous body and it is up to 30 μm at 5% of the cumulative specific surface area, and the content of iron-group metal is reduced to below 0.02 wt.% to obtain a heat conductivity of at least 210W/(m⋅K). In addition, a multi-spindle press is used to provide hole amounts different at the center and the outer periphery of a molded product to thereby change a copper infiltration amount, thereby providing a low-cost semiconductor radiating substrate having no joint material between the center and the outer periphery consisting of different materials.</p> |
