发明名称 MEMORY USING ERROR-CORRECTING CODES TO CORRECT STORED DATA IN BACKGROUND
摘要 A memory (60) that corrects storage errors during those periods in which the memory is not servicing read/write instructions from an external system. The memory (60) reads and writes data words that are stored in a storage block (61) that includes a plurality of storage words. Each storage word stores a data entry specifying one of the data words. The data entry is encoded with error-correcting information sufficient to correct a one-bit error in the data word. The storage words are connected to the error-correcting circuit (64) during idle periods or during the conventional refresh operations in the case of DRAM-like memories. The controller (65) also causes each corrected storage word to be re-written to the storage block (61) in place of the storage word from which the corrected storage word was generated if an error is detected by the error-correcting circuitry .
申请公布号 WO03021599(A1) 申请公布日期 2003.03.13
申请号 WO2002US27615 申请日期 2002.08.30
申请人 TACHYON SEMICONDUCTEUR CORPORATION 发明人 HILBERT, MARK, F.
分类号 G06F11/10;G11C7/24;G11C11/406;G11C29/42;(IPC1-7):G11C7/00;G11C29/00 主分类号 G06F11/10
代理机构 代理人
主权项
地址