发明名称 MASK FOR MANUFACTURING OF SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD AND EXPOSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a mask for manufacturing a semiconductor device, and its manufacturing method and exposing method which improve exposure characteristics by performing multiple exposure under the best lighting conditions for a rough pattern and a fine pattern when exposure to a pattern having both the rough pattern and fine pattern is carried out. SOLUTION: The mask for manufacturing of the semiconductor device has a 1st mask formed in the rough pattern and a 2nd mask formed in the fine pattern and transfers one exposure pattern by performing exposure through the 1st mask and 2nd mask under individual lighting conditions; and the 1st mask has only isolated patterns which do not overlap with adjacent ones when design data of the exposure pattern are enlarged to specific magnification and the 2nd mask has close patterns which overlap with adjacent ones when the design data of the exposure pattern are enlarged to the specific magnification.
申请公布号 JP2003075985(A) 申请公布日期 2003.03.12
申请号 JP20010270075 申请日期 2001.09.06
申请人 SEIKO EPSON CORP 发明人 KANETANI NOBUHIRO
分类号 G03F1/68;G03F1/70;G03F7/20;H01L21/027 主分类号 G03F1/68
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