| 摘要 |
<p>PROBLEM TO BE SOLVED: To accurately and automatically adjust a drawing pattern of a 2nd mask process to a desired angle of rotation for the orientation flat of a wafer. SOLUTION: In an exposure area of a photomask for a 1st mask process, a scale pattern for shot array detection formed by arraying a plurality of linear chromium patterns which are different in length by the same quantity at equal intervals is provided in a direction of <=5 deg. in deviation from the normal of the orientation flat in plane of a wafer as an object to be drawn when transferred to the object wafer; and the number of the linear pattern transferred onto the wafer is checked, the angle of rotation of the shot arrangement of the 1st mask process to the orientation flat is computed, and the angle of rotation of the drawing pattern of the 2nd mask process to the orientation flat is adjusted to a desired angle.</p> |
