发明名称 PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of preventing the contamination with a metal from a plasma treatment chamber allowed to act as an earth electrode and capable of easily controlling the temperature of a surface exposed to plasma. SOLUTION: In the plasma treatment apparatus for independently performing the formation of plasma and the control of the incident energy of ions to a sample, the surface comprising an earthed conductive metal and coming into contact with plasma in the plasma treatment chamber is coated with a plasma- resistant polymeric material 22 becoming t/k&epsi;<300 in the relation between a specific dielectric constant k&epsi; and thickness t (&mu;m).
申请公布号 JP2003071272(A) 申请公布日期 2003.03.11
申请号 JP20010261974 申请日期 2001.08.30
申请人 HITACHI LTD 发明人 FURUSE MUNEO;TAMURA SATOYUKI;SUEHIRO MITSURU
分类号 H05H1/46;B01J3/00;B01J19/08;C23C16/505;C23F4/00;H01L21/302;H01L21/3065 主分类号 H05H1/46
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