发明名称 |
PLASMA TREATMENT APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus capable of preventing the contamination with a metal from a plasma treatment chamber allowed to act as an earth electrode and capable of easily controlling the temperature of a surface exposed to plasma. SOLUTION: In the plasma treatment apparatus for independently performing the formation of plasma and the control of the incident energy of ions to a sample, the surface comprising an earthed conductive metal and coming into contact with plasma in the plasma treatment chamber is coated with a plasma- resistant polymeric material 22 becoming t/kε<300 in the relation between a specific dielectric constant kε and thickness t (μm). |
申请公布号 |
JP2003071272(A) |
申请公布日期 |
2003.03.11 |
申请号 |
JP20010261974 |
申请日期 |
2001.08.30 |
申请人 |
HITACHI LTD |
发明人 |
FURUSE MUNEO;TAMURA SATOYUKI;SUEHIRO MITSURU |
分类号 |
H05H1/46;B01J3/00;B01J19/08;C23C16/505;C23F4/00;H01L21/302;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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