发明名称 Designing integrated circuits to reduce temperature induced electromigration effects
摘要 A method of designing an integrated circuit calculates the current density in each metal lead. The method can calculates a mean time to failure for at least one metal lead. Calculation of the mean time to failure can include the current density and the temperature. The method can assume the metal leads are arranged in series only. The method can calculate the reliability of the integrated circuit based on temperature effects. The method can arrange the set of metal leads by reliability. The method can divide the set of metal leads into at least two subsets, a subset requiring redesign and a subset meeting the reliability criteria. An embodiment includes an integrated circuit designed by the method taught. An embodiment includes a computer program product according to the method taught. An embodiment includes an integrated circuit including an integrated circuit designed according to the computer program product.
申请公布号 US6532570(B1) 申请公布日期 2003.03.11
申请号 US20010949067 申请日期 2001.09.07
申请人 SUN MICROSYSTEMS, INC. 发明人 MAU HENDRIK T.
分类号 G01R31/28;G01R31/3183;G06F17/50;(IPC1-7):G06F17/50 主分类号 G01R31/28
代理机构 代理人
主权项
地址