Use of gaseous silicon hydrides as a reducing agent to remove re-sputtered silicon oxide

摘要

A method and article of manufacture of a semiconductor device having a cleaned source/drain surface and substantially uniform cobalt silicide deposited thereon. The method of the invention includes a precursor conventional step of an argon ion pre-sputter step which generally cleans the semiconductor device surfaces but ensures a resputtering of SiO2 to form SiOx species deposits on the source/drain surface of the device. An in situ treatment using silicon hydride species causes reduction of the SiOx species leaving a cleaned residual silicon which can accept a cobalt deposition to form a desired cobalt silicide layer on the source/drain surface.