| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique to reduce an occupied area of a sense amplifier forming region in a semiconductor chip including a DRAM. SOLUTION: A gate electrode FGST1 of n-channel type MISFET, a gate electrode FGST2 of n-channel type MISFET, a gate electrode FGST3 and p- channel type MISFET and a gate electrode FGST4 of p-channel type MISFET are formed in shapes of rectangular frames on the active region L. A side of square or rectangular shape is allocated in the condition inclined at about 45 deg. for the extending direction of the bit line. |
