| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a chamfered surface of a semiconductor wafer for enhancing a shape maintainability of the chamfered surface of the wafer, without lowering the planarity of the wafer surface. SOLUTION: The method for forming the chamfered surface of the semiconductor wafer comprises the steps of mechanically chamfering using a chamfering grindstone, and then forming an oxide film (b) on the chamfered surface of a silicon wafer W. The method further comprises the steps of thereafter removing the film (b), and removing working damages generated on a front layer of an outer periphery of the wafer, at chamfering by the grindstone together with the film (b). Thus, shape maintainability of the chamfered surface of the wafer W can be enhanced, without lowering the planarity of the surface of the wafer W.
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