| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, which can prevent damages by a plasma and can manufacture the device in a small number of processes, in a GaAs semiconductor process. SOLUTION: In the manufacturing method for a semiconductor device having drain regions 11, source regions 12, and a channel layer 10 jointed with gate electrodes, a gate electrode window opening process (ST22) and a drain/source electrode window opening process (ST42) comprise processes (ST23, ST43) for forming a resist pattern having openings in positions where gate electrodes, drain electrodes and source electrodes are formed on an inorganic insulating layer, processes (ST24, ST44) for dry-etching the inorganic insulating layer exposed through openings until it attains a prescribed film thickness, and processes (ST26, ST46) for wet-etching the inorganic insulating layer exposed through the openings, having the prescribed film thickness, until the inorganic insulating layer is completely removed.
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