METHOD FOR REDUCING WET ETCHING RATE OF SILICON NITRIDE

摘要

PROBLEM TO BE SOLVED: To reduce the wet etching rate of silicon nitride lower than the silicon oxide. SOLUTION: The method includes a step of forming a silicon nitride layer on a semiconductor substrate, a step of injecting nitrogen-containing ions into the silicon nitride layer; and a step of accelerating bonding by heat annealing of the silicon and the nitrogen in the silicon nitride layer injected with nitrogen.