| 摘要 |
PROBLEM TO BE SOLVED: To provide a method, with which a surface defect generated in an epitaxially grown crystal can be reduced, in a production method for compound single crystal for epitaxially growing a compound single crystal layer different from a substrate. SOLUTION: In the production method for compound single crystal for epitaxially growing the compound single crystal layer, different from a compound single crystal substrate on the surface of this substrate, at least one part of the substrate surface has a plurality of projections, extending in one direction and each of such projections is provided, so that the defects to be grown with the epitaxial growth of this compound monocrystal layer can mutually meet. |
