发明名称 SYSTEM AND METHOD FOR BOOSTING WORD LINE SIGNAL OF MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a system for boosting a signal used for a memory device without depending on supply voltage. SOLUTION: As one example of a system, a boost-signal generating circuit for generating a boost-signal used for producing a word line signal in a memory device comprises a pre-charge circuit and a boosting circuit. The pre-charge circuit has an input terminal for receiving an address signal and a boost-control signal, and an output terminal for outputting a pre-charge signal previously set to the prescribed initial voltage. The boosting circuit receives a boost-control signal and outputs a boost-activation signal in accordance with an address control signal. The boost-drive signal is coupled to an output signal of the pre-charge circuit through a capacitive element. When a boost-drive signal is active, a pre-charge signal is raised to the prescribed boost-level which is independent of supply voltage.</p>
申请公布号 JP2003068091(A) 申请公布日期 2003.03.07
申请号 JP20020178882 申请日期 2002.06.19
申请人 FUJITSU LTD 发明人 KURIHARA KAZUHIRO
分类号 G11C16/06;G11C8/08;G11C16/08;H02M3/07;(IPC1-7):G11C16/06 主分类号 G11C16/06
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