| 摘要 |
PROBLEM TO BE SOLVED: To obtain a compound for forming a ferroelectric thin film capable of forming a ferroelectric thin film where good hysteresis characteristics and saturation characteristics are obtained, on a substrate such as platinum, iridium, and iridium oxide. SOLUTION: Coating solution for forming the ferroelectric thin film, which contains (A) organic solvent expressed in the following general formula (1) and (B) organo-metallic compound, in which content of propylene glycol is 10,000 ppm or less. R<1> O(CHCH3 CH2 O)n R<2> ...(1) (where R<1> and R<2> independently show monovalent organic group selected from hydrogen atom, alkyl group having 1 to 4 of carbon number, or CH3 CO, at least one of R<1> and R<2> is a group other than hydrogen atom, and n expresses integer of 1 to 2).
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