| 摘要 |
PROBLEM TO BE SOLVED: To prevent the occurrence of a trouble such as leakage, short- circuiting, etc., caused by ion migration in a semiconductor device. SOLUTION: The semiconductor device is assembled by using a lead frame with heat sink which is constituted by bonding inner leads 1a composed of copper or copper alloys to a heat sink 3 through an adhesive layer 2 formed on the surface of the heat sink 3 and plating at least parts of the inner leads 1a with metal for connecting metallic thin wires. In this device, the bonded portions of the inner leads 1a to the adhesive layer 2 are entirely coated with at least one kind of metal which is different from the metal plated to the parts of the inner leads 1a for connecting thin metal wires, and selected from among gold, platinum, iridium, rhodium, palladium, ruthenium, indium, tin, molybdenum, tungsten, gallium, zinc, chromium, niobium, tantalum, titanium, and zirconium or its alloy. |
