发明名称 |
PARAMETER CREATION METHOD OF LARGE SIGNAL EQUIVALENT CIRCUIT MODEL OF FIELD-EFFECT TRANSISTOR USING GALLIUM ARSENIDE, SIMULATION METHOD USING THE PARAMETER CREATION METHOD, PROGRAM FOR EXECUTING THE METHODS BY COMPUTER, AND PROGRAM-RECORDED RECORDING MEDIUM |
摘要 |
PROBLEM TO BE SOLVED: To obtain a parameter creation method of a large signal equivalent circuit model of a relatively simple GaAs FET, which can show characteristics such as PHEMT accurately even if a bias voltage is changed, and to provide a simulation method of a circuit that performs large signal operation using the PHEMT. SOLUTION: For the parameter creation method of the large signal equivalent circuit model of a GaAs FET, in a variable V1 of a numerical expression for indicating a drain current Ids of a Curtis Etenberg model that is the large signal equivalent circuit model for expressing the electric characteristics of FETs, a numerical expression is applied. In the numerical expression, the term of a gate voltage is not applied to the value ofδthat is a correction term of Ids -Vgs characteristics in the case of a value that differs from Vds when parameters are extracted.
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申请公布号 |
JP2003069037(A) |
申请公布日期 |
2003.03.07 |
申请号 |
JP20010256013 |
申请日期 |
2001.08.27 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
SEKINE TOMOTSUGU;KAWAKAMI KENJI |
分类号 |
G06F17/50;H01L29/00;H01L29/80;(IPC1-7):H01L29/80 |
主分类号 |
G06F17/50 |
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