发明名称 PLASMA TREATMENT APPARATUS, PLASMA CVD SYSTEM, PLASMA TREATMENT METHOD, THIN FILM PRODUCED USING THEM, SUBSTRATE, AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem of plasma treatment being made locally non-uniform by making discharging unstable on the boundry of the central part and peripheral part of a high-frequency electrode by the step of the high-frequency electrode, when the distances of the central part and peripheral part of the high-frequency electrode to a member to be treated and made different by dividing the high-frequency electrode into the central part and the peripheral part for improving in-plane uniformity in large area treatment. SOLUTION: When a divided high-frequency electrode is used, in order to eliminate nonuniformity of plasma treatment in the central part and peripheral part of the electrode, in one arbitrary small electrode of the divided electrode, the distances of a principal face the member to be treated and the face to be treated of the member to be treated are made different continuously, so that uniformity in the plasma treatment can be improved, further, the distances of the principal face of the small electrode and the face to be treated of the member to be treated are controlled to be continuously different, so that plasma treatment can be made uniform, by controlling the distance of the member to be treated and the divided electrode into suitable state corresponding to plasma generation conditions.
申请公布号 JP2003068651(A) 申请公布日期 2003.03.07
申请号 JP20010253733 申请日期 2001.08.24
申请人 SHARP CORP 发明人 INAMASU TAKASHI;WADA KENJI;MORITA HARUYUKI
分类号 H05H1/46;B01J19/08;C23C16/509;H01L21/205;H01L31/04 主分类号 H05H1/46
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