发明名称 |
METHOD FOR FORMING TEST PATTERN FOR MEASURING P-WELL RESISTANCE |
摘要 |
PURPOSE: A method for forming a test pattern for measuring a P-well resistance is provided to exactly measure the resistance of P-well by forming a depletion region at the interface between a p-type substrate and the P-well. CONSTITUTION: A P-well(2) is formed in a p-type substrate(1). An N-well(3) is formed at both sides of the P-well(2) by implanting n-type impurity ions into the substrate(1). A depletion region(4) is formed at the interface between the P-well(2) and the p-type substrate(1) by applying a desired bias to the N-well(3), thereby isolating electrically the P-well(2) to the p-type substrate(1).
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申请公布号 |
KR20030018749(A) |
申请公布日期 |
2003.03.06 |
申请号 |
KR20010053279 |
申请日期 |
2001.08.31 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, JIN HA;NAM, JONG WAN;SHIN, WON HO;SONG, YEONG PYO |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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