发明名称 METHOD FOR FORMING TEST PATTERN FOR MEASURING P-WELL RESISTANCE
摘要 PURPOSE: A method for forming a test pattern for measuring a P-well resistance is provided to exactly measure the resistance of P-well by forming a depletion region at the interface between a p-type substrate and the P-well. CONSTITUTION: A P-well(2) is formed in a p-type substrate(1). An N-well(3) is formed at both sides of the P-well(2) by implanting n-type impurity ions into the substrate(1). A depletion region(4) is formed at the interface between the P-well(2) and the p-type substrate(1) by applying a desired bias to the N-well(3), thereby isolating electrically the P-well(2) to the p-type substrate(1).
申请公布号 KR20030018749(A) 申请公布日期 2003.03.06
申请号 KR20010053279 申请日期 2001.08.31
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, JIN HA;NAM, JONG WAN;SHIN, WON HO;SONG, YEONG PYO
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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