METHOD OF FORMING INSULATION LAYER OF SEMICONDUCTOR DEVICE FOR CONTROLLING COMPOSITION AND DOPING CONCENTRATION

摘要

PURPOSE: A method for forming an insulating layer of a semiconductor device for controlling the composition and doping concentration is provided to improve a boundary characteristic by using an atomic deposition method or a chemical vapor deposition method. CONSTITUTION: An oxide is deposited by using reaction of a precursor of an organic material with an oxygen radical. A deposition process including purge, oxygen radical injection, and purge are performed after the metal precursor is injected. A thermal process is performed under high oxygen or high oxygen radical atmosphere. A metal oxide is formed by controlling a composition ratio of silicon and metal. The contents of silicon within the metal oxide are increased far from a boundary between the metal oxide and a silicon substrate if a silicon injection time is reduced and a metal precursor injection time is increased.