发明名称 METHOD AND SYSTEM FOR A COMBINATION OF HIGH BORON AND LOW BORON BPSG TOP CLAD FABRICATION PROCESS FOR A PLANAR LIGHTWAVE CIRCUIT
摘要 A method of depositing a dual layer top clad for an optical waveguide of a planar lightwave circuit (PLC). The method includes a first step of providing a high flow rate of a Boron dopant gas for a first top cladding layer deposition process. Then, a low flow rate of a Boron dopant gas is provided for a second top cladding layer deposition process. The second top cladding layer deposition process is performed directly on the first top cladding layer deposition. The first and second top cladding layer deposition processes are combined to form a dual layer top clad of the PLC having a high Boron portion covering a plurality of optical cores and a low Boron portion covering the first portion. The first top cladding layer deposition process can comprises three deposition and anneal cycles using the high flow rate for the Boron dopant gas. The three deposition and anneal cycles are used to fill gaps between the plurality of optical cores of the PLC. The second top cladding layer deposition process comprises a single deposition and anneal cycle using the low flow rate for the Boron dopant gas. The low Boron portion is configured to cover the high Boron portion and protect the high Boron portion from corrosion. The Boron dopant gas can comprise B2H6 or B(OCH3)3 tetramethyl borate (TMB). Thus the dual layer top clad process can effectively fill high aspect ratio gaps between waveguide cores while maintaining good corrosion resistance.
申请公布号 US2003044151(A1) 申请公布日期 2003.03.06
申请号 US20010945300 申请日期 2001.08.31
申请人 ZHONG FAN;LI KANGJIE 发明人 ZHONG FAN;LI KANGJIE
分类号 C23C16/40;G02B6/12;G02B6/132;G02B6/136;(IPC1-7):G02B6/10;C03B37/018 主分类号 C23C16/40
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