| 摘要 |
<p>A method of etching a structure including a magnetic material, the method includes providing a structure (70) including a magnetic material (80), applying a mask material (84) to at least a portion of the structure, and reactive ion beam etching the magnetic material using an etch process including a carbon based compound, wherein the mask material forms a material which etches slower than the magnetic material. The etch process can further include argon ions. The carbon based compound can be a compound selected from the group of C2H2, CHF3, and CO2. The etch process can alternatively include argon ions, oxygen and either C2H2 or CHF3. The magnetic material can comprise a compound including a material selected from the group of Fe, Ni, and Co. The mask material can comprise a layer of Ta, W, Mo, Si, Ti or a photoresist.</p> |
