| 摘要 |
PURPOSE: To solve the problem that a chip cannot be miniaturized smoothly due to mesa etching and a thick polyimide layer and characteristics cannot be improved due to the distance between electrodes in a Schottky barrier diode, and etching at a Schottky junction section cannot be controlled easily in a manufacturing method of a Schottky barrier diode. CONSTITUTION: N- and n+-type ion implanted regions are provided on a substrate surface as an operation region, thus eliminating the need for mesa and a polyimide layer, and achieving the planar type Schottky barrier diode of a compound semiconductor. The costs of a wafer can also be reduced, and the distance between electrodes can be reduced, thus shrinking the chip, and improving high-frequency characteristics. Additionally, GaAs is not etched when a Schottky junction region is formed, thus manufacturing a Schottky barrier diode having excellent reproducibility.
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