发明名称 |
Diffusion barrier layer for semiconductor wafer fabrication |
摘要 |
Diffusion barrier film layers and methods of manufacture and use are provided. The films comprise boron-doped TiCl4-based titanium nitride, and provide an improved diffusion barrier having good adhesive, electrical conductivity, and anti-diffusion properties. The films can be formed on a silicon substrate without an underlying contact layer such as TiSix, an improvement in the fabrication of contacts to shallow junctions and other miniature components of integrated circuits.
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申请公布号 |
US2003042607(A1) |
申请公布日期 |
2003.03.06 |
申请号 |
US20010942108 |
申请日期 |
2001.08.29 |
申请人 |
DERRAA AMMAR;SHARAN SUJIT;CASTROVILLO PAUL |
发明人 |
DERRAA AMMAR;SHARAN SUJIT;CASTROVILLO PAUL |
分类号 |
H01L21/285;H01L21/768;H01L23/485;H01L29/45;(IPC1-7):H01L21/476;H01L23/52;H01L29/40 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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