| 摘要 |
PURPOSE: A semiconductor fabrication apparatus is provided to improve quality of a thin film by injecting two or more source gases and reaction gases through injectors. CONSTITUTION: A wafer(1) is loaded into a single wafer chamber(110) of a vertical furnace method. A source material supply portion(120) stores a source material and supply the stored source material to the inside of the single wafer chamber(110). A reaction gas supply portion(130) stores a reaction gas and supplies the stored reaction gas. A susceptor(112) has a heater heating the wafer(1). An exhaust tube(114) is formed at one side of the susceptor(112). The source material supply portion(120) includes a source material storage portion(122), a plurality of liquid mass flow controllers(124a,124b), a plurality of vaporizers(126a,126b), and a plurality of injectors(128a,128b). The reaction gas supply portion(130) has a plurality of reaction gas injectors(134a,134b).
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