发明名称 Flash memory
摘要 Redundant circuits 11 to 15 are provided in correspondence to memory blocks 1 to 5, respectively. Bit lines BL0 to BL15 are located across the memory blocks. Spare bit lines SBL1 and SBL2 m are located across the redundant circuits 11 to 15. When a memory cell failure occurs in the memory block 5 except a predetermined memory block (for example, a boot block) 2 and when the bit line BL8 corresponding to the memory cell failure is replaced with the spare bit line SBL1, each of switches 56 and 76 is put into an on state in correspondence to the spare bit line SBL1. Furthermore, each of switches 48 and 88 is put into the on state in correspondence to the bit line BL8. As a result, the spare bit line SBL1 turns the redundant circuit 12 corresponding to the memory block 2, to be connected to the memory block 2.
申请公布号 US2003043626(A1) 申请公布日期 2003.03.06
申请号 US20020193252 申请日期 2002.07.12
申请人 ABE TOSHIHIRO;KASAI YOSHIO;OOTANI NAOKI;SUGITA MITSURU 发明人 ABE TOSHIHIRO;KASAI YOSHIO;OOTANI NAOKI;SUGITA MITSURU
分类号 G11C16/06;G11C16/04;G11C29/00;G11C29/04;(IPC1-7):G11C11/34 主分类号 G11C16/06
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