| 摘要 |
Methods are disclosed for determining a reticle pattern to be defined on a reticle used for charged-particle-beam microlithography performed using a high beam-acceleration voltage. The pattern is determined so at to define pattern elements, destined for transfer-exposure to respective edges of chips, on the reticle in a manner serving to reduce proximity effects in such elements when imprinted on the substrate, whether or not the elements are in peripherally situated chips (located at or near a wafer perimeter) or in chips located centrally on the substrate. On the reticle the profile of such an element is reconfigured as required to reduce proximity effects caused by proximal pattern elements in neighboring chips. To reduce variations in the imprinted profile of such an element in peripherally located chips versus centrally located chips on the substrate, portions of neighboring chips that straddle the substrate edge are imprinted nevertheless. This ensures that the edges of each entire chip imprinted on the substrate experiences the same proximity effect that is offset by the pattern defined by the reticle, regardless of whether the imprinted entire chips are located peripherally or centrally on the substrate. |
