| 发明名称 |
Semiconductor integrated circuit device and manufacturing method of semiconductor integrated circuit device |
| 摘要 |
After formation of Cu interconnections 46a to 46e each to be embedded in an interconnection groove 40 of a silicon oxide film 39 by CMP and then washing, the surface of each of the silicon oxide film 39 and Cu interconnections 46a to 46e is treated with a reducing plasma (ammonia plasma). Then, without vacuum break, a cap film (silicon nitride film) is formed continuously. This process makes it possible to improve the dielectric breakdown resistance (reliability) of a copper interconnection formed by the damascene method.
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| 申请公布号 |
US2003045086(A1) |
申请公布日期 |
2003.03.06 |
| 申请号 |
US20020233432 |
申请日期 |
2002.09.04 |
| 申请人 |
HITACHI, LTD. |
发明人 |
NOGUCHI JUNJI;OHASHI NAOFUMI;TAKEDA KENICHI;SAITO TATSUYUKI;YAMAGUCHI HIRUZU;OWADA NOBUO |
| 分类号 |
H01L21/3205;H01L21/02;H01L21/28;H01L21/321;H01L21/3213;H01L21/70;H01L21/768;H01L23/532;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/3205 |
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