Method and apparatus for manufacturing semiconductor devices

摘要

A semiconductor manufacturing method and a semiconductor manufacturing apparatus are capable of manufacturing semiconductor devices with excellent step coverage and high throughput and at low cost. A substrate (1) is arranged in a thermal CVD apparatus which includes a reaction chamber (5), a gas supply port (7) through which ruthenium precursor gases for depositing ruthenium films or ruthenium oxide films on a substrate (1) are supplied to the reaction chamber (5), and a gas exhaust port 8 through which the precursor gases are exhausted from the reaction chamber (5). A first ruthenium precursor gas is caused to flow from the gas supply port (7) toward the substrate (1) so that a first ruthenium film or a first ruthenium oxide film is deposited on the substrate (1). With the first ruthenium film or the first ruthenium oxide film being employed as an underlayer, a second ruthenium film or a second ruthenium oxide film having a thickness greater than that of the underlayer is deposited by using a second ruthenium precursor gas different from the first ruthenium precursor gas.