STRIPPER COMPOSITION FOR PHOTO RESIST

摘要

PURPOSE: A stripper composition for photo resist is provided, to improve the photo resist dissolving power and the strippability, and to simplify the gate wiring process of a LCD circuit or a semiconductor IC by allowing the hard bake process and the ashing process in the gate process line to be omitted and reducing the etching time of Cr (the second conductive layer). CONSTITUTION: The stripper composition comprises an alkanol amine; an organic solvent; 0.01-0.1 wt% of a fluorine-based nonionic surfactant; and 2-30 wt% of water. Preferably the fluorine-based nonionic surfactant is represented by the formula F(CF2CF2)nCH2CH2O(CH2CH2O)xH, wherein n is an integer of 1-9 and x is an integer of 0-25. Preferably the stripper composition comprises 20-30 wt% of monoethanol amine; 50-66 wt% of N-methylpyrrolidone; 0.01-0.1 wt% of the fluorine-based nonionic surfactant; and 4-30 wt% of water.