| 摘要 |
A method of selective epitaxial growth for a semiconductor device is disclosed. By employing a hydrogen gas as a selectivity promoting gas in addition to a chlorine gas conventionally used, the method can guarantee the selectivity of epitaxial growth and further increase the growth rate of an epitaxial layer. The method begins with loading a semiconductor substrate into a reaction chamber. The substrate has a mask layer, which is selectively formed thereon to define a first portion exposed beyond the mask layer and a second portion covered by the mask layer. Next, a source gas is supplied into the reaction chamber so that the source gas is adsorbed on the first portion and thus the epitaxial layer is selectively formed on the first portion. Then, the selectivity promoting gas including the H2 gas into the reaction chamber, whereby any nucleus of semiconductor material is removed from the mask layer. Thereafter, the source gas and the selectivity promoting gas are sequentially and repeatedly supplied until the semiconductor epitaxial layer is grown to a desired thickness. |
