发明名称 |
METHOD FOR LOCALLY MODIFYING ELECTRONIC AND OPTOELECTRONIC PROPERTIES OF CRYSTALLINE MATERIALS AND DEVICES MADE FROM SUCH MATERIALS |
摘要 |
<p>An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction ( 10 ) formed from a p-type layer ( 11 ) and an n-type layer ( 12 ), both formed from indirect bandgap semiconductor material. The p-type layer ( 11 ) contains an array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.</p> |
申请公布号 |
EP1287565(A1) |
申请公布日期 |
2003.03.05 |
申请号 |
EP20010936668 |
申请日期 |
2001.06.07 |
申请人 |
UNIVERSITY OF SURREY |
发明人 |
HOMEWOOD, KEVIN, PETER;GWILLIAM, RUSSELL, MARK;SHAO, GUOSHENG |
分类号 |
H01L33/00;H01L33/02;H01L33/34;H01S5/20;(IPC1-7):H01L33/00;H01S5/30 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|