| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas sensor exhibiting high compatibility with an ordinary semiconductor process. SOLUTION: The gas sensor S1 comprises a semiconductor substrate 10, a membrane 20 formed on one side of the semiconductor substrate 10, and a gas sensitive film 26 for detecting gas formed in the membrane 20 on one side of the semiconductor substrate 10. A heater part 22, a lead-out electrode 23 for the gas sensitive part having one end side connected electrically with the gas sensitive film 26 in the membrane 20 and the other side led out to the outside of the membrane 20, and a lead-out electrode for the heater part having one end side connected electrically with the heater part 22 in the membrane 20 and the other side led out to the outside of the membrane 20 are formed in the membrane 20 on one side of the semiconductor substrate 10. The heater part 22, the lead-out electrode 23 for the gas sensitive part and the lead-out electrode for the heater part comprise polysilicon.
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