发明名称 Method for writing to multiple banks of a memory device
摘要 In a multi-bank memory system such as a synchronous dynamic random access memory (SDRAM), a method of writing data to the banks is provided. This method allows for writing to any number of banks. More particularly, this method allows for writing to a selected number of banks between one and all banks. In addition, the method retains the discrete nature of the selected banks by allowing any row in each bank to be accessed regardless of the rows activated in other banks. As a result, rows of different memory banks that are intended to store similar data may be accessed simultaneously for purposes of writing the data in test and non-test modes. This allows for quicker writing to the SDRAM without the errors that may be created by other fast writing modes, such as data compression.
申请公布号 US6529429(B2) 申请公布日期 2003.03.04
申请号 US20010925237 申请日期 2001.08.08
申请人 MICRON TECHNOLOGY, INC. 发明人 COWLES TIMOTHY B.;WRIGHT JEFFREY P.
分类号 G11C7/10;G11C8/12;G11C11/406;(IPC1-7):G11C7/00 主分类号 G11C7/10
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