发明名称 Biased ion beam deposition of high density carbon
摘要 A device for increasing the incident energy of an ion for coating a disc in an ion beam deposition process. The ion beam deposition process is performed in a chamber with the disc to be coated disposed therein. An ion source, having a voltage level, is introduced into the chamber for generating an ion beam for depositing ions on the disc. A bias contact is coupled to the disc and a power supply is coupled to the bias contact. The power supply applies a voltage level to the bias contact that is less than the voltage level of the ion source thereby creating a negative bias voltage between the disc and the ion source. This negative bias voltage causes the incident energy of the ion to increase. As a result, the optimal incident energy can be achieved using a lower original energy.
申请公布号 US6526909(B1) 申请公布日期 2003.03.04
申请号 US20000532621 申请日期 2000.03.22
申请人 SEAGATE TECHNOLOGY, LLC 发明人 GRANNEN KEVIN JOHN;MCCANN JEFFREY ARTHUR;MA XIAODING;GUI JING;SHOWS MARK ANTHONY
分类号 H01J37/317;(IPC1-7):H05H1/00 主分类号 H01J37/317
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