Self-aligned split-gate flash memory cell having a single-side tip-shaped floating-gate structure and its contactless flash memory arrays

摘要

A self-aligned split-gate flash memory cell of the present invention comprises a planarized control/select-gate conductive layer having a portion formed at least on a second gate-dielectric layer and another portion formed at least on a single-side tip-shaped floating-gate structure being formed on a first gate-dielectric layer, wherein a dielectric layer is formed over the single-side tip-shaped floating-gate structure to act as a first intergate-dielectric layer and a second intergate-dielectric layer is formed over an inner sidewall of the single-side tip-shaped floating-gate structure. The self-aligned split-gate flash memory cell is configured into two contactless array architectures: a contactless NOR-type flash memory array and a contactless parallel common-source/drain conductive bit-lines flash memory array.