| 摘要 |
PROBLEM TO BE SOLVED: To provide a spin valve type thin film element having small asymmetry, superior heat-resistance, superior reliability, in which the thin film element has a bias conductive layer and is capable of controlling the direction of variable magnetization of a free magnetic layer, by applying current to the bias conductive layer. SOLUTION: The spin valve type thin film element includes at least an antiferromagnetic layer 2 on a substrate; a stationary magnetic layer 3; a free magnetic layer 5 through a non-magnetic conductive layer 4 on the stationary magnetic layer 3; a hard bias layer; a conductive layer 8 for applying a detective current i1 to the stationary magnetic layer 3, the non-magnetic conductive layer 4, and the free magnetic layer 5; a bias conductive layer B11 for controlling the direction of variable magnetization Hf1; and a current feed means 15 for feeding a current for the conductive layer 8 and the bias conductive layer B11.
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