SEMICONDUCTOR MANUFACTURING APPARATUS, CHAMBER THEREFOR, AND METHOD OF REGENERATING CHAMBER THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus, a chamber for the apparatus, and a method for regenerating a chamber for the apparatus which can suppress wear of constituent components of the chamber, metal contamination and generation of particles within the chamber. SOLUTION: An etching apparatus 1 includes a chamber 5 which has a lower chamber body 2, an upper chamber main body 3, and a doom 4. A wafer stage 6 for supporting a wafer to be etched thereon is disposed within the chamber 5. A coil antenna 13 is provided along an outer periphery of the dome 4. A source radio frequency (RF) power source 15 is connected to the coil antenna 13 via a radio frequency (RF) matching box 14. A bias high frequency power source 17 is connected to the wafer stage 6ss via a radio frequency matching device 16. A film layer 18 of Y2 O3 is formed on an inner wall surface of the dome 4 as a site corresponding to a plasma generation region P in the chamber 5.