| 摘要 |
PROBLEM TO BE SOLVED: To provide semiconductor manufacturing device/method having less source gas consumption quantity, when epitaxial growth is conducted on an arbitrary wafer. SOLUTION: When epitaxial layers on the wafers 7a to 7j are adjusted and small slots are produced, source gas is supplied only to the arbitrary substrate 7b and the substrates 7a and 7c adjacent to the substrate 7b, raw gas is not supplied to the substrates 7d to 7j. Thus, source gas can accordingly be saved and wasteful consumption of source gas can be suppressed.
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