SEMICONDUCTOR MEMORY AND DRIVING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To solve the problem of a limited memory capacity due to the problems in terms of reliability such as reduction of memory holding time of a memory cell and soft errors accompanying the miniaturization of a semiconductor memory by a conventional DRAM, and the problem of large power consumption due to frequent refresh operation. SOLUTION: The semiconductor memory is provided with a source diffusion layer 112, a drain diffusion layer 113 and a gate electrode 114 between them and a solid electrolyte secondary battery 120 is connected to the drain diffusion layer 113 as a charge holding part. Since a voltage generated by the battery is used for information storage, two or more pieces of information are stored inside one memory cell without depending on a shape or size of the memory cell, the number of times of the refresh operation is reduced and the power consumption is reduced as well.