发明名称 MANUFACTURING METHOD OF MAGNETORESISTIVE EFFECT ELEMENT, THIN FILM MAGNETIC HEAD, AND HEAD UNIT
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of a magnetic resistive effect element with improved characteristics, a manufacturing method of a thin film magnetic head, and to provide a manufacturing method of a head unit. SOLUTION: A regenerative head unit having an MR film is formed on a substrate (step S102), and a recording head unit is formed (step S103). The MR film is formed by forming an antiferromagnetic layer, a first ferromagnetic layer, a tunnel barrier layer, and a second antiferromagnetic layer sequentially. The side face of a formed film face of the MR film is polished mechanically, to adjust the height of the element (step S105). The mechanically polished face is wet-etched and the residual, after the mechanical polishing is removed (step S106). Then, electrical short-circuiting of the tunnel barrier layer caused by the polishing waste can be prevented, and the damage on the tunnel barrier layer and the recording head unit can be reduced by the etching. In addition, a step of the substrate, the reproducing head unit, and the recording head unit does not become large as compared with the case of dry etching.
申请公布号 JP2003060266(A) 申请公布日期 2003.02.28
申请号 JP20010240531 申请日期 2001.08.08
申请人 TDK CORP 发明人 UEDA KUNIHIRO;KUWAJIMA TETSUYA;SARUGI SHUNJI
分类号 G01R33/09;G11B5/39;H01L43/08;H01L43/12;(IPC1-7):H01L43/12 主分类号 G01R33/09
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