| 摘要 |
PROBLEM TO BE SOLVED: To accurately control the thicknesses of compound semiconductor layers, contained in a compound semiconductor device to be manufactured to the target thicknesses by deciding the growing time of the compound semiconductor layers, so that the semiconductor layers is grown to the target thicknesses. SOLUTION: A first quantum well layer 19, composed of a material the quantum level of which corresponds to the thickness of the layer 19 at 1:1, is formed on a wafer for monitoring. A laminate 25 is formed by repeatedly growing second quantum well layers 20, composed of the same material as that of the first quantum well layer 19 and having the same thickness as the layer 19 has and compound semiconductor layers 21 for monitoring several times in a fixed cycle. The thickness of the layer 19 is found through photoluminescence measurement, and the spatial period in the laminate 25 is measured by X-ray diffraction. The thicknesses of the compound semiconductor layers 21 for monitoring are found, by subtracting the thickness of the film 19 from the spatial period. In addition, the growing time of the compound semiconductor layers 21 is decided from a growing rate calculated from the thicknesses of the layers 21.
|
