| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device and its reading method that can employ a current mirror capable of interlaced reading and noninterlaced reading, without the need for increasing the number of transistors. SOLUTION: The solid-state image pickup device (CMOS image sensor), employing the current mirror circuit 11 selects pixels by two rows at interlace reading, supplies an obtained output current of each pixel of the two rows to the current mirror circuit 11, and gives a voltage proportional to a sum of output currents of each pixel of the two rows to a CDS circuit 12. In the case of interlace reading of first and second fields, the combination of two rows is shifted by one row, and a reset-off timing for reset transistors (TRs) M1a, M1b, M1c or the like is made the same for pixels of two adjacent rows for simultaneous reading in the succeeding field. This is for preventing deviation of exposure times.
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