| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method of exposure, capable of overlaying patterns with high degrees of accuracy in transfer errors component depending on no linear expansion and contraction, residual rotation errors, or the like of a wafer. SOLUTION: Information of a transfer error is obtained by transfer a pattern in a first region (RPA1) on a mask (RT), on a wafer on which a prescribed region is a target region, and depending on the relationship between the transferred region and the target region on the wafer transferred by the pattern. Further, the position offset used for transfer the pattern in a second region (RPA2) with its central position different from the first region is calculated, using an information of each central position and the transfer error of the first region and the second region. Based on the position offset, the position of the wafer is controlled, and the pattern in the second region is transferred to the wafer.</p> |
