| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element, having a nitride semiconductor layer with a low residual oxygen concentration. SOLUTION: The semiconductor element comprises a III-V nitride semiconductor obtained by a chemical vapor deposition method, using a material gas containing a carrier gas in which an oxygen, is removed by using an oxygen gas removal means provided at a carrier gas supply passage, in which hydrogen is supplied as the carrier gas.
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