SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device provided with a field effect transistor having a channel in which the mobility of a carrier is high and crystal defects are less. SOLUTION: In an NMOS transistor on an Si substrate 10, an Si layer 13n and SiGeC layer 14n are formed. A carrier storage layer utilizing a non- continuous part of a conduction band present at the hetero boundary of the SiGeC layer 14n and the Si layer 13n is formed and electrons travel with the carrier storage layer as the channel. The mobility of the electrons is high in the SiGeC layer 14n compared to silicon and an operation speed of the NMOS transistor is accelerated as well. The channel where a positive hole of a PMOS transistor travels is formed by utilizing the non-continuous part of a valence band generated at the boundary of an SiGe layer 15p and the Si layer 17p. The mobility of the positive hole is high in the SiGe layer compared to the Si layer as well, and the operation speed of the PMOS transistor is also accelerated.