| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that has a gate insulating film, having an improved nitrogen concentration profile and good electrical characteristics, and to provide a method of manufacturing the device. SOLUTION: This semiconductor device is provided with a gate insulating film 2A which is interposed between an Si substrate 1 and the gate electrode 3 and contains at least a silicon oxinitride film in part. The silicon oxinitride film has a nitrogen concentration profile in which the nitrogen concentration in a region in contact with the substrate 1 is adjusted to 0-2 atm.% and that in a region which contains nitrogen at the highest concentration is adjusted to 5-20 atm.%. In order to realize this nitrogen concentration profile, the surface region of the oxide film or oxinitride film is subjected to plasma nitriding after the film is formed or the surface region of the Si substrate 1 is oxidized after a nitride film or the oxinitride film is formed.
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